Description:These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; NSV60100DMTWTBG - Wettable Flanks Packaged Device; Continuous Collector Current(IC) = -1 A Peak Collector Current (ICM) = -2 A; Low VCE(sat): -200 mV @ IC = -1 A, IB = -100 mA (Beta: IC/IB = 10); hFE of 140 @ IC = -1 A, VCE = -2 V
The recommended PCB footprint for the NSS60100DMTTBG is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and a gate current (Ig) of at least 10mA. This will minimize the on-state resistance (Rds(on)) and ensure maximum current handling.
The maximum safe operating area (SOA) for the NSS60100DMTTBG is defined by the maximum drain-source voltage (Vds) of 100V, maximum drain current (Id) of 1A, and maximum power dissipation (Pd) of 2.5W. Operating within these limits ensures reliable device operation.
To protect the NSS60100DMTTBG from electrostatic discharge (ESD), handle the device with an anti-static wrist strap or mat, and ensure the PCB has adequate ESD protection, such as TVS diodes or ESD protection arrays.
The thermal resistance (RθJA) of the NSS60100DMTTBG is approximately 62°C/W. This value represents the thermal resistance from the junction to ambient, and is used to calculate the maximum allowable power dissipation.
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NSS60100DMTTBG Overview
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