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NSS60601MZ4T1G - onsemi

Description: Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
NSS60601MZ4T1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 -2020
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NSS60601MZ4T1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223 -2020
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NSS60601MZ4T1G Details

  • Manufacturer Part Number:

    NSS60601MZ4T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    50

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • Turn-off Time-Max (toff):

    1475 ns

  • Turn-on Time-Max (ton):

    200 ns

NSS60601MZ4T1G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material to improve heat transfer.
  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. Operating the device above this voltage can cause permanent damage.
  • Yes, the NSS60601MZ4T1G is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, additional testing and validation may be required for specific use cases.
  • Use a logic analyzer or oscilloscope to monitor the device's inputs and outputs. Check the power supply voltage, decoupling capacitors, and PCB layout for any issues. Consult the datasheet and application notes for troubleshooting guidelines.

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NSS60601MZ4T1G Overview

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Part Image NSS60601MZ4T3G onsemi

Small Signal Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA