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NSTB60BDW1T1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; Available in 8 mm, 7 inch/3000 Unit Tape and Reel; ESD Rating - Human Body Model: Class 1B Machine Model: Class B

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NSTB60BDW1T1G Details

  • Manufacturer Part Number:

    NSTB60BDW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Package Description:

    CASE 419B-02, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTOR RATIO IS 2.13

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.385 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    140 MHz

NSTB60BDW1T1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NSTB60BDW1T1G is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • The recommended PCB layout and thermal design for the NSTB60BDW1T1G involves using a multi-layer PCB with thermal vias, placing the device near a heat sink, and ensuring good thermal conductivity between the device and the heat sink.
  • To handle power dissipation, it's crucial to calculate the maximum power dissipation (PD) using the formula PD = (TJ - TA) / θJA, where TJ is the junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance.
  • The NSTB60BDW1T1G has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during assembly and testing. Additionally, latch-up prevention can be achieved by following proper design and layout guidelines, such as minimizing signal trace lengths and using guard rings.

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NSTB60BDW1T1G Overview

Use the download button to access the NSTB60BDW1T1G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NSTB6, or try a keyword search, such as Small Signal Bipolar Transistors

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