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NSVF5488SKT3G - onsemi

Description: Low-noise : NF = 1.0 dB typ. (f = 1 GHz); High gain : |S21e|2 = 12 dB typ. (f = 1 GHz); High cut-off frequency : fT = 7 GHz typ.; SSFP package is pin-compatible with SOT-623; AEC-Q101 qualified and PPAP capable; Pb-Free, Halogen Free and RoHS compliance

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NSVF5488SKT3G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - NSVF5488SKT3G
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NSVF5488SKT3G - onsemi  - 3D model - SO Transistor Flat Lead - NSVF5488SKT3G
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NSVF5488SKT3G Details

  • Manufacturer Part Number:

    NSVF5488SKT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    SOT-623 / SSFP

  • Package Description:

    SOT-623, 3 PIN

  • Manufacturer Package Code:

    631AC

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Factory Lead Time:

    31 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.07 A

  • Collector-Base Capacitance-Max:

    1.2 pF

  • Collector-Emitter Voltage-Max:

    10 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    90

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    0.1 W

  • Power Dissipation-Max (Abs):

    0.1 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    7000 MHz

NSVF5488SKT3G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using a thermal interface material to fill any gaps.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • To handle ESD protection for the NSVF5488SKT3G, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design. Additionally, consider using ESD-protected devices and components in the surrounding circuitry.
  • The recommended soldering conditions for the NSVF5488SKT3G involve using a soldering temperature between 240°C to 260°C, with a peak temperature not exceeding 260°C. The soldering time should be limited to 10 seconds or less, and the device should be handled with care to avoid mechanical stress.

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NSVF5488SKT3G Overview

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