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NSVMMBTH81LT1G - onsemi

Description: RF Transistor PNP 20V 50mA 600MHz 225mW Surface Mount SOT-23

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NSVMMBTH81LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU
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NSVMMBTH81LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU
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NSVMMBTH81LT1G Details

  • Manufacturer Part Number:

    NSVMMBTH81LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Base Capacitance-Max:

    0.85 pF

  • Collector-Emitter Voltage-Max:

    20 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    0.225 W

  • Power Dissipation-Max (Abs):

    0.225 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    600 MHz

  • VCEsat-Max:

    0.5 V

NSVMMBTH81LT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for the NSVMMBTH81LT1G can be found in the onsemi application note AND8407/D, which provides guidelines for PCB design, thermal management, and layout considerations to ensure optimal performance and reliability.
  • The input capacitor values for the NSVMMBTH81LT1G depend on the specific application and operating conditions. A general guideline is to use a 10uF to 22uF ceramic capacitor with a voltage rating of 50V or higher. However, it's recommended to consult the onsemi application note AND8407/D for more detailed guidance on input capacitor selection.
  • The maximum allowed voltage on the enable pin (EN) is 6V. The EN pin should be driven with a logic signal (0V to 5V) and should not be left floating. A pull-up or pull-down resistor can be used to ensure the pin is not left in a high-impedance state.
  • To ensure the NSVMMBTH81LT1G is properly biased and configured, follow the recommended operating conditions and application circuit in the datasheet. Additionally, consult the onsemi application note AND8407/D for detailed guidance on biasing, configuration, and layout considerations.
  • The thermal impedance (Zth) of the NSVMMBTH81LT1G is typically around 2°C/W, and the junction-to-case thermal resistance (RθJC) is around 1.5°C/W. These values can be found in the onsemi datasheet or in the device's thermal characterization report.

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