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NSVMMBTH81LT3G - onsemi

Description: These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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NSVMMBTH81LT3G Details

  • Manufacturer Part Number:

    NSVMMBTH81LT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Base Capacitance-Max:

    0.85 pF

  • Collector-Emitter Voltage-Max:

    20 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    0.225 W

  • Power Dissipation-Max (Abs):

    0.225 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    600 MHz

  • VCEsat-Max:

    0.5 V

NSVMMBTH81LT3G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • Handle the device with ESD-protective equipment and follow standard ESD handling procedures. The device has built-in ESD protection, but it's not a substitute for proper handling and storage.
  • Yes, the NSVMMBTH81LT3G is AEC-Q101 qualified and suitable for high-reliability and automotive applications. However, ensure you follow the recommended operating conditions and design guidelines.
  • Use a thermal imaging camera to identify hotspots, check for proper PCB layout and thermal design, and verify that the device is operated within the recommended specifications.

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NSVMMBTH81LT3G Overview

Use the download button to access the NSVMMBTH81LT3G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NSVMM, or try a keyword search, such as RF Small Signal Bipolar Transistors

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