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NSVMMUN2135LT1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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NSVMMUN2135LT1G - onsemi - PCB symbol
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PCB Footprints
NSVMMUN2135LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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3D Models
NSVMMUN2135LT1G - onsemi - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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NSVMMUN2135LT1G Details

  • Manufacturer Part Number:

    NSVMMUN2135LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 21.36

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.4 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

NSVMMUN2135LT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves placing the device near the power source, using a solid ground plane, and minimizing trace lengths. For thermal management, a heat sink or thermal pad is recommended, and the device should be mounted on a multi-layer PCB with thermal vias to dissipate heat effectively.
  • To ensure EMC, follow proper PCB design guidelines, use a shielded enclosure, and implement filtering and shielding techniques. Additionally, ensure that the device is properly decoupled and that the power supply is well-regulated to minimize electromagnetic interference (EMI).
  • The NSVMMUN2135LT1G is a high-reliability device with a mean time between failures (MTBF) of >10 million hours. It is also qualified to AEC-Q101 standards, ensuring high quality and reliability in automotive and industrial applications.
  • The NSVMMUN2135LT1G is rated for operation up to 150°C, making it suitable for high-temperature applications. However, it's essential to ensure proper thermal management and follow the recommended operating conditions to maintain reliability and performance.
  • To troubleshoot issues, refer to the device's fault detection and protection features, such as overvoltage protection (OVP) and overcurrent protection (OCP). Check the device's status pins and fault flags to identify the issue, and consult the datasheet and application notes for guidance on troubleshooting and recovery procedures.

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NSVMMUN2135LT1G Overview

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