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NSVMMUN2136LT1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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NSVMMUN2136LT1G - onsemi - PCB symbol
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PCB Footprints
NSVMMUN2136LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU
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3D Models
NSVMMUN2136LT1G - onsemi - 3D model - SOT23 (3-Pin) - SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU
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NSVMMUN2136LT1G Details

  • Manufacturer Part Number:

    NSVMMUN2136LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.4 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

NSVMMUN2136LT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves placing the device near the power source, using a solid ground plane, and minimizing trace lengths. For thermal management, a heat sink or thermal pad is recommended, and the device should be mounted on a multi-layer PCB with thermal vias to dissipate heat effectively.
  • To ensure EMC, follow proper PCB layout and design guidelines, use shielding and filtering components, and ensure that the device is properly decoupled from the power supply. Additionally, consider using a common-mode choke and TVS diodes for added protection.
  • The NSVMMUN2136LT1G has a high reliability rating, with a mean time to failure (MTTF) of over 1 million hours. It also meets various quality standards, including AEC-Q101 and ISO/TS 16949. However, it's essential to follow proper storage, handling, and soldering procedures to ensure the device's reliability and quality.
  • The NSVMMUN2136LT1G is rated for operation up to 150°C, but it's essential to consider the device's power dissipation and thermal management when operating in high-temperature environments. Ensure that the device is properly cooled, and consider derating the device's performance to prevent overheating.
  • To troubleshoot common issues, refer to the device's datasheet and application notes. Use oscilloscopes and other diagnostic tools to identify the root cause of the issue. For overvoltage or overcurrent protection, check the device's input voltage and current ratings, and ensure that the device is properly configured and protected.

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NSVMMUN2136LT1G Overview

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