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NSVMMUN2233LT3G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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NSVMMUN2233LT3G - onsemi - PCB symbol
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PCB Footprints
NSVMMUN2233LT3G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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3D Models
NSVMMUN2233LT3G - onsemi - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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NSVMMUN2233LT3G Details

  • Manufacturer Part Number:

    NSVMMUN2233LT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BAIS RESISTOR RATIO IS 10

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.4 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

NSVMMUN2233LT3G Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal thermal resistance, use thermal vias, and keep the device away from heat sources. A heat sink or thermal pad can be used to improve heat dissipation. Consult onsemi's application notes and thermal management guidelines for more information.
  • Follow onsemi's EMC and EMI guidelines, use proper shielding, and ensure the device is placed away from noise sources. Implement filtering and decoupling capacitors as needed. Consult onsemi's application notes and relevant industry standards for more information.
  • Operate the device within the specified temperature range (-40°C to 150°C), ensure a stable power supply, and avoid exceeding the maximum ratings for voltage, current, and power dissipation. Consult the datasheet and onsemi's application notes for more information.
  • Use onsemi's troubleshooting guides and application notes, perform visual inspections, and use diagnostic tools such as oscilloscopes and logic analyzers. Consult with onsemi's technical support team or a qualified engineer for assistance.
  • Consult onsemi's reliability and safety guidelines, ensure the device is used within its specified operating conditions, and implement redundant or fail-safe designs as needed. Consult with onsemi's technical support team or a qualified engineer for assistance.

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NSVMMUN2233LT3G Overview

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