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NSVMSD1819A-RT1G - onsemi

Description: Available in 8 mm, 7-inch/3000 Unit Tape and Reel; Low VCE(sat), < 0.5 V; High hFE, 210-460; Moisture Sensitivity Level 1; ESD Protection: Human Body Model > 4000 V ESD Protection: Machine Model > 400 V; Pb-Free Package is Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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PCB Footprints
NSVMSD1819A-RT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC−70 (SOT−323) CASE 419 ISSUE R
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3D Models
NSVMSD1819A-RT1G - onsemi  - 3D model - SOT23 (3-Pin) - SC−70 (SOT−323) CASE 419 ISSUE R
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NSVMSD1819A-RT1G Details

  • Manufacturer Part Number:

    NSVMSD1819A-RT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70-3 / SOT-323-3

  • Package Description:

    SC-70, SOT-323, 3 PIN

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2016-05-27

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    90

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.15 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.5 V

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NSVMSD1819A-RT1G Overview

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