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NT5AD512M16C4-HRI - Nanya

Description: Commercial and Industrial DDR4 8Gb SDRAM

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NT5AD512M16C4-HRI - Nanya PCB footprint - BGA - BGA - NT5AD512M16C4-HRI
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NT5AD512M16C4-HRI - Nanya  - 3D model - BGA - NT5AD512M16C4-HRI
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NT5AD512M16C4-HRI Details

  • Manufacturer Part Number:

    NT5AD512M16C4-HRI

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Date Of Intro:

    2020-08-18

  • Manufacturer:

    Nanya Technology Corporation

  • YTEOL:

    5.07

  • Access Mode:

    FOUR BANK PAGE BURST

  • Clock Frequency-Max (fCLK):

    1333 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    8

  • JESD-30 Code:

    R-PBGA-B96

  • Length:

    13 mm

  • Memory Density:

    8589934592 bit

  • Memory IC Type:

    DDR4 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    96

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    95 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA96,9X16,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    8

  • Standby Current-Max:

    0.022 A

  • Supply Current-Max:

    0.274 mA

  • Supply Voltage-Max (Vsup):

    1.26 V

  • Supply Voltage-Min (Vsup):

    1.14 V

  • Supply Voltage-Nom (Vsup):

    1.2 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Width:

    7.5 mm

NT5AD512M16C4-HRI Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for NT5AD512M16C4-HRI is 0°C to 95°C.
  • To ensure signal integrity and reduce noise, it is recommended to follow the PCB layout guidelines provided in the datasheet, use a solid ground plane, and add decoupling capacitors near the DDR4 SDRAM.
  • The recommended voltage for NT5AD512M16C4-HRI is 1.2V ± 0.06V. Operating the DDR4 SDRAM outside this range may result in reduced performance, increased power consumption, or even damage to the device.
  • The NT5AD512M16C4-HRI requires periodic refresh commands to maintain data integrity. The self-refresh mode can be used to reduce power consumption during idle periods. Refer to the datasheet for specific refresh command timing and self-refresh mode entry/exit procedures.
  • The timing parameters for write leveling and read leveling are provided in the datasheet. To implement them, you need to adjust the DQ/DQS timing to ensure proper signal alignment and data validity. You may need to use a delay-locked loop (DLL) or a phase-locked loop (PLL) to achieve this.

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