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NT5CC256M16CP-DII - Nanya

Description: DDR3-1600 256Mx16 (4Gb) Ind 1.35V

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PCB Footprints
NT5CC256M16CP-DII - Nanya PCB footprint - BGA - BGA - 96-BAll BGA_2024
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3D Models
NT5CC256M16CP-DII - Nanya  - 3D model - BGA - 96-BAll BGA_2024
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NT5CC256M16CP-DII Details

  • Manufacturer Part Number:

    NT5CC256M16CP-DII

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    9 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-96

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Manufacturer:

    Nanya Technology Corporation

  • YTEOL:

    0

  • Access Mode:

    MULTI BANK PAGE BURST

  • Access Time-Max:

    0.225 ns

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    800 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    8

  • JESD-30 Code:

    R-PBGA-B96

  • Length:

    13 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    DDR3L DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    96

  • Number of Words:

    268435456 words

  • Number of Words Code:

    256000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    256MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA96,9X16,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Qualification Status:

    Not Qualified

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    8

  • Standby Current-Max:

    0.016 A

  • Supply Current-Max:

    0.243 mA

  • Supply Voltage-Max (Vsup):

    1.45 V

  • Supply Voltage-Min (Vsup):

    1.283 V

  • Supply Voltage-Nom (Vsup):

    1.35 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Width:

    9 mm

NT5CC256M16CP-DII Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for NT5CC256M16CP-DII is 0°C to 95°C.
  • To ensure signal integrity, it is recommended to use a signal integrity analysis tool to simulate the signal behavior and optimize the PCB design. Additionally, following the JEDEC standard for DDR3 SDRAM signal routing and termination is crucial.
  • The refresh interval for NT5CC256M16CP-DII is 64ms, which is a standard refresh interval for DDR3 SDRAM.
  • No, NT5CC256M16CP-DII is designed to operate at a voltage supply of 1.5V ± 0.075V. Using a different voltage supply may damage the device or affect its performance.
  • Error handling and retries should be implemented in the system design. The DDR3 SDRAM itself does not have built-in error correction or retry mechanisms. It is recommended to use ECC (Error-Correcting Code) or other error correction mechanisms to detect and correct errors.

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