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NTB25P06T4G - onsemi

Description: RoHS Compliant

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Symbol
NTB25P06T4G - onsemi - PCB symbol
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PCB Footprints
NTB25P06T4G - onsemi PCB footprint - Other - Other - D2PAK 3 CASE 418B−04 ISSUE L
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3D Models
NTB25P06T4G - onsemi - 3D model - Other - D2PAK 3 CASE 418B−04 ISSUE L
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NTB25P06T4G Details

  • Manufacturer Part Number:

    NTB25P06T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK 2 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    418B-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    27.5 A

  • Drain-source On Resistance-Max:

    0.082 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTB25P06T4G Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NTB25P06T4G is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
  • To ensure proper biasing, the NTB25P06T4G requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 1V and 25V. Additionally, the device should be operated within the recommended operating conditions specified in the datasheet.
  • For optimal thermal performance, it is recommended to use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. The device should be placed on a copper plane with a minimum of 1 oz copper thickness. A thermal via array can also be used to improve heat dissipation.
  • Yes, the NTB25P06T4G is suitable for high-frequency applications up to 100 kHz. However, the device's performance may degrade at higher frequencies due to its internal capacitances and inductances. It is recommended to use a gate driver with a high-frequency capability and to optimize the PCB layout for high-frequency operation.
  • To protect the NTB25P06T4G from ESD, it is recommended to use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins. Additionally, handling the device with an anti-static wrist strap or mat, and storing it in an anti-static bag can prevent ESD damage.

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NTB25P06T4G Overview

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NTB25P06T4G Alternates

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Image Part Number Model
Part Image NTB18N06G Rochester Electronics LLC

15A, 60V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418AA-01, D2PAK-3
Part Image NTB25P06G onsemi

Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET