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NTB45N06LT4G - onsemi

Description: ON Semiconductor NTB45N06LT4G N-channel MOSFET Transistor, 45 A, 60 V, 3-Pin D2PAK

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NTB45N06LT4G - onsemi PCB footprint - Other - Other - D2PAK 3 CASE 418B−04 ISSUE L
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NTB45N06LT4G - onsemi  - 3D model - Other - D2PAK 3 CASE 418B−04 ISSUE L
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NTB45N06LT4G Details

  • Manufacturer Part Number:

    NTB45N06LT4G

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    D2PAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    418B-04

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    240 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.4 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTB45N06LT4G Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the NTB45N06LT4G can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure the NTB45N06LT4G is properly biased, make sure to provide a stable gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range. Additionally, ensure the device is properly heatsinked to prevent thermal runaway.
  • For optimal thermal performance, it's recommended to use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. Ensure good thermal conductivity between the device and the heat sink, and consider using thermal vias to dissipate heat efficiently.
  • To protect the NTB45N06LT4G from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors. Additionally, consider using a conformal coating to protect the device from moisture and humidity.
  • The NTB45N06LT4G is designed to meet the reliability requirements of automotive and industrial applications. The device is qualified to AEC-Q101 and is expected to last for millions of hours under normal operating conditions. However, the actual lifespan will depend on factors such as operating temperature, voltage, and current stress.

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Part Image NTB45N06L onsemi

Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET