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NTB5426NT4G - onsemi

Description: Obsolete - Single P-Channel Power MOSFET -60V -18.5A 140 mΩ

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PCB Footprints
NTB5426NT4G - onsemi PCB footprint - Other - Other - D2PAK 3 CASE 418B−04 ISSUE L_5
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3D Models
NTB5426NT4G - onsemi  - 3D model - Other - D2PAK 3 CASE 418B−04 ISSUE L_5
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NTB5426NT4G Details

  • Manufacturer Part Number:

    NTB5426NT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK 2 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    418B-04

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    735 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    215 W

  • Pulsed Drain Current-Max (IDM):

    260 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTB5426NT4G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the IC, using a solid ground plane, and keeping the thermal path short and direct to the heat sink or thermal pad.
  • To ensure reliable operation at high temperatures, follow the recommended operating conditions, use a suitable heat sink, and implement thermal monitoring and protection mechanisms, such as thermal shutdown or warning circuits.
  • Operating the NTB5426NT4G at a lower voltage than the recommended 5V may reduce its performance, increase power consumption, and affect its reliability. It is recommended to operate the device within the specified voltage range for optimal performance and reliability.
  • To handle ESD protection for the NTB5426NT4G, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits or devices, such as TVS diodes or ESD arrays, in the system design.
  • When using the NTB5426NT4G in a high-reliability or safety-critical application, consider implementing redundant circuits, error detection and correction mechanisms, and fault-tolerant design principles to ensure the system's reliability and safety.

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NTB5426NT4G Overview

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