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NTBG045N065SC1 - onsemi

Description: High Junction Temperature; 100% UIL Tested; RoHS Compliant; Max RDS(on) = 52.4 mΩ at Vgs = 18V, Id = 20A; High Speed Switching and Low Capacitance; 650V rated

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NTBG045N065SC1 Details

  • Manufacturer Part Number:

    NTBG045N065SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-03-23

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    73.7 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13.78 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    425 W

  • Pulsed Drain Current-Max (IDM):

    315 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON CARBIDE

NTBG045N065SC1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NTBG045N065SC1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet, including the gate-source voltage (Vgs) and drain-source voltage (Vds) ratings. Additionally, consider the device's threshold voltage (Vth) and ensure the gate drive voltage is sufficient to fully enhance the device.
  • Proper thermal management is crucial for the NTBG045N065SC1. Ensure good heat sinking, consider the device's thermal resistance (Rthja), and follow the recommended PCB layout and thermal design guidelines to minimize thermal impedance.
  • Yes, the NTBG045N065SC1 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, consider the device's switching characteristics, such as the rise and fall times, and ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).
  • To protect the NTBG045N065SC1 from ESD, follow proper handling and storage procedures, use ESD-safe materials and equipment, and consider implementing ESD protection circuits or devices in your design.

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NTBG045N065SC1 Overview

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