NTBG0 Model Download Search Results
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NTBG020N120SC1
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1 | Low On Resistance; Ultra Low Gate Charge; High Junction Temperature; High UIS, Surge Current, and Avalanche | Other | NTBG020N120SC1 |
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NTBG080N120SC1
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1 | Low On Resistance; Ultra Low Gate Charge; High Junction Temperature; Low Effective Output Capacitance; This device is RoHS Compliant | Other | NTBG080N120SC1 |
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NTBG032N065M3S
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1 | 100% Avalanche Tested; Halide Free and RoHS Compliant; D2PAK-7L package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 55 nC); High Speed Switching with Low Capacitance (Coss = 113 pF); 15V to 18V Gate Drive; Typ. RDS(on) = 32 mΩ at Vgs = 18V | Other | NTBG032N065M3S |
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NTBG040N120M3S
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1 | D2PAK-7L package with Kelvin source configuration; Ultra Low Gate Charge (QG(tot) = 75 nC); High Speed Switching with Low Capacitance (Coss = 80 pF); 15V to 18V Gate Drive; New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses; 100% Avalanche Tested; Halide Free and RoHS Compliant; Excellent FOM [ = Rdson * Eoss ] | Other | NTBG040N120M3S |
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NTBG015N065SC1
onsemi
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1 | RoHS Compliant; High Speed Switching and Low Capacitance; 650V rated; Max RDS(on) = 18.4 mΩ at Vgs = 18V, Id = 60A; Low RDSon; High Junction Temperature; 100% UIL Tested | Other | NTBG015N065SC1 |
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NTBG025N065SC1
onsemi
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1 | High Junction Temperature (Tj = 175°C); Kelvin Source Configuration; Ultra Low Gate Charge (QG(tot) = 164 nC); Low Output Capacitance (Coss = 278 pF); Zero reverse recovery current of body diode; 650V rated; 100% Avalanche Tested; Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 1.5 Ω | Other | NTBG025N065SC1 |
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NTBG070N120M3S
onsemi
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1 | 15V to 18V Gate Drive; New M3S technology: 65 mohm RDS(ON) with low Eon and Eoff losses; 100% Avalanche Tested; D2PAK-7L package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 57 nC); High Speed Switching with Low Capacitance (COSS = 57 pF); Halide Free and RoHS Compliant | Other | NTBG070N120M3S |
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NTBG030N120M3S
onsemi
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1 | 100% Avalanche Tested; 15V to 18V Gate Drive; New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses; Halide Free and RoHS Compliant; D2PAK-7L package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 107 nC); High Speed Switching with Low Capacitance (Coss = 106 pF) | Other | NTBG030N120M3S |
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NTBG014N120M3P
onsemi
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1 | D2PAK-7L package for low common source inductance; 15V to 18V Gate Drive; New M3P technology: 14mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested | Other | NTBG014N120M3P |
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NTBG060N065SC1
onsemi
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1 | High Junction Temperature (Tj = 175°C); Kelvin Source Configuration; Ultra Low Gate Charge (QG(tot) = 74 nC); Low Output Capacitance (Coss = 133 pF); Zero reverse recovery current of body diode; Typ. RDS(on) = 44 mΩ; 650V rated; 100% UIL Tested; Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 3.9 Ω | Other | NTBG060N065SC1 |
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NTBG023N065M3S
onsemi
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1 | D2PAK-7L package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 69 nC); High Speed Switching with Low Capacitance (Coss = 153 pF); 15V to 18V Gate Drive; Typ. RDS(on) = 23 mΩ at Vgs = 18V; 100% Avalanche Tested; Halide Free and RoHS Compliant | Other | NTBG023N065M3S |
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NTBG028N170M1
onsemi
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1 | D2PAK-7L package for low common source inductance; 18V to 20V Gate Drive; 100% Avalanche Tested; New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses | Other | NTBG028N170M1 |
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NTBG022N120M3S
onsemi
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1 | D2PAK-7L package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 151 nC); High Speed Switching with Low Capacitance (Coss = 146 pF); New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses; 15V to 18V Gate Drive; 100% Avalanche Tested; Halide Free and RoHS Compliant | Other | NTBG022N120M3S |
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NTBG040N120SC1
onsemi
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1 | Low On Resistance; Ultra Low Gate Charge; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Other | NTBG040N120SC1 |
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NTBG012N065M3S
onsemi
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1 | Power Field-Effect Transistor, 136A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263CB | NTBG012N065M3S |
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NTBG020N090SC1
onsemi
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1 | Power Field-Effect Transistor, 112A I(D), 900V, 0.028ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263CB | NTBG020N090SC1 |
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NTBG045N065SC1
onsemi
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1 | High Junction Temperature; 100% UIL Tested; RoHS Compliant; Max RDS(on) = 52.4 mΩ at Vgs = 18V, Id = 20A; High Speed Switching and Low Capacitance; 650V rated | NTBG045N065SC1 |
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NTBG050N065SC1
onsemi
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1 | Power Field-Effect Transistor, 70.4A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263CB | NTBG050N065SC1 |
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NTBG060N090SC1
onsemi
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1 | Power Field-Effect Transistor, 44A I(D), 900V, 0.084ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263CB | NTBG060N090SC1 |
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NTBG016N065M3S
onsemi
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1 | Power Field-Effect Transistor, 104A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263CB | NTBG016N065M3S |
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