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NTBG080N120SC1 - onsemi

Description: Low On Resistance; Ultra Low Gate Charge; High Junction Temperature; Low Effective Output Capacitance; This device is RoHS Compliant

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PCB Footprints
NTBG080N120SC1 - onsemi PCB footprint - Other - Other - D2PAK7 (TO−263−7L HV)
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3D Models
NTBG080N120SC1 - onsemi  - 3D model - Other - D2PAK7 (TO−263−7L HV)
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NTBG080N120SC1 Details

  • Manufacturer Part Number:

    NTBG080N120SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-08-09

  • Manufacturer:

    onsemi

  • YTEOL:

    6.7

  • Avalanche Energy Rating (Eas):

    171 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7.9 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    179 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

  • Turn-off Time-Max (toff):

    52 ns

  • Turn-on Time-Max (ton):

    44 ns

NTBG080N120SC1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NTBG080N120SC1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 250W for the NTBG080N120SC1.
  • The recommended gate drive voltage for the NTBG080N120SC1 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the NTBG080N120SC1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum dv/dt rating for the NTBG080N120SC1 is 10kV/μs. This rating ensures that the device can withstand high voltage transients and switching frequencies without compromising its reliability.

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NTBG080N120SC1 Overview

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