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NTBG030N120M3S - onsemi

Description: 100% Avalanche Tested; 15V to 18V Gate Drive; New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses; Halide Free and RoHS Compliant; D2PAK-7L package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 107 nC); High Speed Switching with Low Capacitance (Coss = 106 pF)

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Symbol
NTBG030N120M3S - onsemi - PCB symbol
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PCB Footprints
NTBG030N120M3S - onsemi PCB footprint - Other - Other - D2PAK−7L_2023-2
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3D Models
NTBG030N120M3S - onsemi - 3D model - Other - D2PAK−7L_2023-2
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NTBG030N120M3S Details

  • Manufacturer Part Number:

    NTBG030N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.82

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    77 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9.4 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    348 W

  • Pulsed Drain Current-Max (IDM):

    207 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTBG030N120M3S Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NTBG030N120M3S is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the NTBG030N120M3S. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 300W.
  • The recommended gate drive voltage for the NTBG030N120M3S is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the NTBG030N120M3S can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended dead time for the NTBG030N120M3S depends on the specific application and switching frequency. As a general guideline, a dead time of 100-200 ns is recommended to prevent shoot-through and ensure reliable operation.

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NTBG030N120M3S Overview

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