Part Image

NTBG070N120M3S - onsemi

Description: 15V to 18V Gate Drive; New M3S technology: 65 mohm RDS(ON) with low Eon and Eoff losses; 100% Avalanche Tested; D2PAK-7L package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 57 nC); High Speed Switching with Low Capacitance (COSS = 57 pF); Halide Free and RoHS Compliant

Download NTBG070N120M3S Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTBG070N120M3S - onsemi PCB footprint - Other - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
click to zoom
3D Models
NTBG070N120M3S - onsemi  - 3D model - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
click to zoom

NTBG070N120M3S Details

  • Manufacturer Part Number:

    NTBG070N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.8

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.087 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    172 W

  • Pulsed Drain Current-Max (IDM):

    93 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTBG070N120M3S Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers connected to the thermal pad. Additionally, it's recommended to use vias to connect the thermal pad to the bottom layer to improve heat dissipation.
  • To ensure the device is properly biased for optimal performance, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves connecting the gate to a voltage source through a resistor, and the source to a voltage source or ground through a resistor. The specific biasing scheme may vary depending on the application, so it's crucial to consult the datasheet and application notes for guidance.
  • Operating the device beyond the recommended maximum junction temperature can lead to reduced performance, decreased reliability, and potentially even device failure. It's essential to ensure that the device is operated within the recommended temperature range to maintain its performance and longevity.
  • To handle ESD protection for this device, it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. Additionally, it's essential to design the PCB with ESD protection in mind, such as using ESD protection diodes and resistors, and ensuring that the device is properly grounded.
  • Using a different package type or lead frame material can affect the device's thermal performance, electrical characteristics, and reliability. It's essential to consult the datasheet and application notes to understand the implications of using a different package type or lead frame material, and to ensure that the device is properly designed and tested for the specific application.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTBG070N120M3S Overview

Use the download button to access the NTBG070N120M3S schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTBG0, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTBG070N120M3S

Showing 0 results