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NTBG028N170M1 - onsemi

Description: D2PAK-7L package for low common source inductance; 18V to 20V Gate Drive; 100% Avalanche Tested; New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses

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PCB Footprints
NTBG028N170M1 - onsemi PCB footprint - Other - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
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3D Models
NTBG028N170M1 - onsemi  - 3D model - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
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NTBG028N170M1 Details

  • Manufacturer Part Number:

    NTBG028N170M1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.82

  • Avalanche Energy Rating (Eas):

    450 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    71 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    428 W

  • Pulsed Drain Current-Max (IDM):

    195 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTBG028N170M1 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-ounce copper layer, with a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. This will help to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider derating the device's power handling capability at higher temperatures.
  • Although not explicitly stated in the datasheet, a general rule of thumb is to limit voltage transients to 10-20% above the maximum rated voltage (Vds) to prevent damage to the device. In this case, the maximum allowed voltage transient would be around 200-220V.
  • While the NTBG028N170M1 is primarily designed for linear applications, it can be used in switching applications with high frequencies. However, it's crucial to consider the device's switching losses, gate drive requirements, and ensure that the layout is optimized for high-frequency operation.
  • A recommended gate drive voltage is around 10-12V, with a current capability of at least 1-2A. This will help to ensure fast switching times and minimize losses. However, the specific gate drive requirements may vary depending on the application and operating conditions.

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NTBG028N170M1 Overview

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