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NTBG060N065SC1 - onsemi

Description: High Junction Temperature (Tj = 175°C); Kelvin Source Configuration; Ultra Low Gate Charge (QG(tot) = 74 nC); Low Output Capacitance (Coss = 133 pF); Zero reverse recovery current of body diode; Typ. RDS(on) = 44 mΩ; 650V rated; 100% UIL Tested; Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 3.9 Ω

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NTBG060N065SC1 - onsemi PCB footprint - Other - Other - NTBG060N065SC1-1
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NTBG060N065SC1 - onsemi  - 3D model - Other - NTBG060N065SC1-1
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NTBG060N065SC1 Details

  • Manufacturer Part Number:

    NTBG060N065SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Date Of Intro:

    2020-04-06

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    57.5 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10.18 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    344 W

  • Pulsed Drain Current-Max (IDM):

    231 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON CARBIDE

NTBG060N065SC1 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the thermal relief pattern.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including using a heat sink, ensuring good thermal interface material (TIM) between the device and heat sink, and keeping the junction temperature (Tj) below the maximum rated value of 150°C.
  • The critical parameters to monitor during operation to prevent premature failure include the junction temperature (Tj), drain-source voltage (Vds), gate-source voltage (Vgs), and drain current (Id). It's essential to ensure that these parameters are within the recommended operating ranges to prevent overheating, overvoltage, and overcurrent conditions.
  • When selecting a gate driver for the NTBG060N065SC1, consider the following factors: the driver's output current capability, rise and fall times, and the ability to handle the device's input capacitance. A gate driver with a high output current capability and fast rise and fall times can help minimize switching losses and ensure reliable operation.
  • To protect the NTBG060N065SC1 from electrostatic discharge (ESD), it's recommended to follow proper handling and storage procedures, use ESD-safe materials and tools, and implement ESD protection circuits, such as TVS diodes or ESD protection arrays, in the system design.

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