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NTBG040N120SC1 - onsemi

Description: Low On Resistance; Ultra Low Gate Charge; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant

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PCB Footprints
NTBG040N120SC1 - onsemi PCB footprint - Other - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
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NTBG040N120SC1 - onsemi  - 3D model - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
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NTBG040N120SC1 Details

  • Manufacturer Part Number:

    NTBG040N120SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.8

  • Avalanche Energy Rating (Eas):

    578 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12.5 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    357 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

  • Turn-off Time-Max (toff):

    66 ns

  • Turn-on Time-Max (ton):

    66 ns

NTBG040N120SC1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NTBG040N120SC1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good airflow around the device, and consider using a thermal interface material to improve heat transfer between the device and heat sink.
  • The recommended gate drive voltage for the NTBG040N120SC1 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the NTBG040N120SC1 can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum dv/dt rating for the NTBG040N120SC1 is 10 kV/μs. Exceeding this rating can cause the device to malfunction or fail.

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NTBG040N120SC1 Overview

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