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NTBG014N120M3P - onsemi

Description: D2PAK-7L package for low common source inductance; 15V to 18V Gate Drive; New M3P technology: 14mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested

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NTBG014N120M3P - onsemi PCB footprint - Other - Other - NTBG014N120M3P-2
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NTBG014N120M3P - onsemi  - 3D model - Other - NTBG014N120M3P-2
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NTBG014N120M3P Details

  • Manufacturer Part Number:

    NTBG014N120M3P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.82

  • Avalanche Energy Rating (Eas):

    418 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    104 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    27 pF

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    454 W

  • Pulsed Drain Current-Max (IDM):

    257 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTBG014N120M3P Frequently Asked Questions (FAQs)

  • The maximum junction temperature for NTBG014N120M3P is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or lower, and ensuring good airflow around the device. Additionally, the device's thermal pad should be soldered to a copper plane on the PCB to facilitate heat dissipation.
  • The recommended gate drive voltage for NTBG014N120M3P is between 10V and 15V. This ensures proper switching and minimizes the risk of damage to the device.
  • Yes, NTBG014N120M3P is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation.
  • To protect the device, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

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NTBG014N120M3P Overview

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