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NTBG022N120M3S - onsemi

Description: D2PAK-7L package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 151 nC); High Speed Switching with Low Capacitance (Coss = 146 pF); New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses; 15V to 18V Gate Drive; 100% Avalanche Tested; Halide Free and RoHS Compliant

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PCB Footprints
NTBG022N120M3S - onsemi PCB footprint - Other - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
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3D Models
NTBG022N120M3S - onsemi  - 3D model - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
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NTBG022N120M3S Details

  • Manufacturer Part Number:

    NTBG022N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.82

  • Avalanche Energy Rating (Eas):

    267 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    58 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    234 W

  • Pulsed Drain Current-Max (IDM):

    159 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTBG022N120M3S Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for voltage and current, and to ensure that the device is properly cooled. The device should be operated within the specified junction temperature range, and the thermal design should be validated through thermal simulations and testing.
  • The NTBG022N120M3S has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. The device can withstand ESD pulses up to 2kV according to the Human Body Model (HBM) and 150V according to the Machine Model (MM).
  • Yes, the NTBG022N120M3S can be used in a parallel configuration to increase current capability, but it's essential to ensure that the devices are properly matched and that the layout is symmetrical to avoid current imbalance. Additionally, the user should carefully evaluate the thermal performance and ensure that the devices are properly cooled.
  • The recommended gate drive circuits for the NTBG022N120M3S involve using a dedicated gate driver IC with a high current capability and a low output impedance. The gate drive circuit should be designed to provide a fast rise and fall time, and to ensure that the device is properly turned on and off.

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NTBG022N120M3S Overview

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