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NTBG040N120M3S - onsemi

Description: D2PAK-7L package with Kelvin source configuration; Ultra Low Gate Charge (QG(tot) = 75 nC); High Speed Switching with Low Capacitance (Coss = 80 pF); 15V to 18V Gate Drive; New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses; 100% Avalanche Tested; Halide Free and RoHS Compliant; Excellent FOM [ = Rdson * Eoss ]

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PCB Footprints
NTBG040N120M3S - onsemi PCB footprint - Other - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B_2023
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3D Models
NTBG040N120M3S - onsemi  - 3D model - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B_2023
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NTBG040N120M3S Details

  • Manufacturer Part Number:

    NTBG040N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.8

  • Avalanche Energy Rating (Eas):

    143 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    57 A

  • Drain-source On Resistance-Max:

    0.054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    263 W

  • Pulsed Drain Current-Max (IDM):

    149 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTBG040N120M3S Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the thermal relief pattern.
  • To ensure the device is properly biased, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves using a gate driver IC and a bootstrap capacitor to provide the necessary voltage and current to the gate terminal. Additionally, it's crucial to ensure the device is operated within the recommended voltage and current ratings.
  • The critical parameters to monitor during operation to prevent device failure include the junction temperature (TJ), drain-source voltage (VDS), gate-source voltage (VGS), and drain current (ID). It's essential to ensure these parameters are within the recommended operating ranges to prevent overheating, overvoltage, and overcurrent conditions.
  • The correct gate resistor value depends on the specific application requirements, including the switching frequency, gate driver IC, and PCB layout. A general rule of thumb is to use a gate resistor value between 1 ohm and 10 ohms. However, it's recommended to consult the gate driver IC datasheet and perform simulations to determine the optimal gate resistor value for your specific application.
  • The recommended ESD protection measures for this device include using ESD-sensitive handling procedures during assembly, implementing ESD protection circuits on the PCB, and using ESD-protected gate driver ICs. Additionally, it's essential to ensure the device is properly grounded and connected to a suitable ESD protection network.

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NTBG040N120M3S Overview

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