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NTBG1000N170M1 - onsemi

Description: D2PAK-7L package for low common source inductance; 18V to 20V Gate Drive; New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested

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NTBG1000N170M1 - onsemi PCB footprint - Other - Other - NTBG1000N170M1-2
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NTBG1000N170M1 - onsemi  - 3D model - Other - NTBG1000N170M1-2
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NTBG1000N170M1 Details

  • Manufacturer Part Number:

    NTBG1000N170M1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    1.43 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.6 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    51 W

  • Pulsed Drain Current-Max (IDM):

    14.6 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTBG1000N170M1 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or heat sink, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components to allow for airflow.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and implement thermal management techniques such as thermal monitoring and cooling systems.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range.
  • The NTBG1000N170M1 is an industrial-grade device, but it may not meet the specific requirements for high-reliability or automotive applications. It's essential to consult with onsemi or a qualified engineer to determine the device's suitability for such applications.
  • To handle ESD protection, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits or devices in the system design.

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NTBG1000N170M1 Overview

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