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NTD24N06LT4 - onsemi

Description: MOSFET – Power, N-Channel, Logic Level, DPAK 24 A, 60 V,24 AMPERES, 60 VOLTS RDS(on) = 0.036 Ω (Type)

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NTD24N06LT4 - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE G_2025-14
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NTD24N06LT4 Details

  • Manufacturer Part Number:

    NTD24N06LT4

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DPAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 369C-01

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    162 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.36 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD24N06LT4 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the NTD24N06LT4 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings. It's recommended to consult with onsemi's application notes or contact their technical support for more information.
  • To ensure the NTD24N06LT4 is properly biased, follow the recommended biasing conditions outlined in the datasheet. This includes setting the gate-source voltage (VGS) within the recommended range, typically between 2V to 5V, and ensuring the drain-source voltage (VDS) is within the maximum rating. Additionally, consider the device's threshold voltage (VTH) and ensure the gate-source voltage is above VTH to maintain a stable operating point.
  • The recommended PCB layout and thermal management for the NTD24N06LT4 involve following best practices for high-power MOSFET devices. This includes using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and ensuring good thermal conductivity between the device and the heat sink. Additionally, consider using thermal vias and a thermal interface material (TIM) to improve heat dissipation. Consult onsemi's application notes and PCB layout guidelines for more information.
  • To protect the NTD24N06LT4 from electrostatic discharge (ESD), follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and bags, and ensuring the device is stored in a static-protective environment. During PCB assembly, use ESD-protective equipment and follow proper soldering techniques to minimize the risk of ESD damage.
  • The reliability and lifespan expectations for the NTD24N06LT4 are dependent on various factors, including operating conditions, temperature, and usage patterns. onsemi provides reliability data and lifetest results in their datasheet and application notes. In general, the NTD24N06LT4 is designed to meet the requirements of automotive and industrial applications, with a typical lifespan of 10 to 20 years or more, depending on the specific use case.

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NTD24N06LT4 Overview

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Part Image NTD24N06LG Rochester Electronics LLC

24A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3

Part Image NTD24N06LG onsemi

Power Field-Effect Transistor, 24A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET