Part Image

NTD360N65S3H - onsemi

Description: Typ. RDS(on) = 296 m Ω; 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 17.5 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.9 Ω

Download NTD360N65S3H Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTD360N65S3H - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD)_Thickness=2.39mm
click to zoom
3D Models
NTD360N65S3H - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD)_Thickness=2.39mm
click to zoom

NTD360N65S3H Details

  • Manufacturer Part Number:

    NTD360N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    75 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD360N65S3H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other side of the board. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
  • The NTD360N65S3H has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended.
  • Yes, the NTD360N65S3H is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, it's essential to consult with onsemi's application engineers to ensure the device meets the specific requirements of your application.
  • The recommended gate drive circuits and components for the NTD360N65S3H include a gate driver IC with a minimum output current of 2A, a gate resistor of 10-20 ohms, and a decoupling capacitor of 100nF-1uF. The specific components and circuitry may vary depending on the application and switching frequency.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTD360N65S3H Overview

Use the download button to access the NTD360N65S3H schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTD36, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTD360N65S3H

Showing 0 results