Part Image

NTD4809NT4G - onsemi

Description: Obsolete - Power MOSFET 30V 54A 10 mOhm Single N-Channel DPAK

Download NTD4809NT4G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTD4809NT4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE B
click to zoom

NTD4809NT4G Details

  • Manufacturer Part Number:

    NTD4809NT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK 4 LEAD Single Gauge Surface Mount

  • Package Description:

    DPAK-3/2

  • Pin Count:

    4

  • Manufacturer Package Code:

    369AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD4809NT4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTD4809NT4G is -55°C to 150°C.
  • To ensure reliability, follow the recommended assembly and handling procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a robust PCB design, and implementing adequate thermal management and ESD protection.
  • For optimal thermal performance, use a multi-layer PCB with a thermal via structure, and ensure good thermal conductivity between the device and the heat sink. Also, follow the recommended land pattern and keep the PCB traces as short as possible to minimize thermal resistance.
  • Handle the device by the body, avoiding touching the leads or die. Store the devices in their original packaging, away from direct sunlight, moisture, and extreme temperatures. Follow the recommended baking and dry packing procedures to prevent moisture-related damage.
  • Use a soldering iron with a temperature range of 350°C to 380°C, and a soldering time of 3-5 seconds. For rework, use a hot air rework station with a temperature range of 350°C to 380°C, and a rework time of 10-15 seconds.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTD4809NT4G Overview

Use the download button to access the NTD4809NT4G schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like NTD48, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTD4809NT4G

Showing 0 results

NTD4809NT4G Alternates

Showing results

Image Part Number Model
Part Image NTD4809NHT4G onsemi

Power Field-Effect Transistor, 9A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET