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NTD4815N-35G - onsemi

Description: Single N-Channel Power MOSFET 30V 35A 15mΩ, 8.5 A, - 55c + + 150 C

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PCB Footprints
NTD4815N-35G - onsemi PCB footprint - Other - Other - 3 IPAK, STRAIGHT LEAD CASE 369AC
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3D Models
NTD4815N-35G - onsemi  - 3D model - Other - 3 IPAK, STRAIGHT LEAD CASE 369AC
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NTD4815N-35G Details

  • Manufacturer Part Number:

    NTD4815N-35G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    3.5 mm IPAK, Straight Lead

  • Package Description:

    IPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369AD

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    60.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.9 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    32.6 W

  • Pulsed Drain Current-Max (IDM):

    87 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD4815N-35G Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it is recommended to follow the recommended operating conditions, use a heat sink if necessary, and ensure good thermal conductivity between the device and the heat sink or PCB.
  • The maximum safe operating area (SOA) for the NTD4815N-35G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and maximum ratings. It is recommended to consult with onsemi's application engineers for specific guidance.
  • Yes, the NTD4815N-35G can be used in switching applications, but it is essential to ensure that the device is operated within its recommended switching frequency and duty cycle to avoid overheating and reduce electromagnetic interference (EMI).
  • To protect the NTD4815N-35G from electrostatic discharge (ESD), it is recommended to follow proper handling and storage procedures, use ESD-safe materials and equipment, and implement ESD protection circuits in the design.

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