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NTD4906NT4G - onsemi

Description: Power MOSFET 30V 54A 5.5 mOhm Single N-Channel DPAK

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NTD4906NT4G Details

  • Manufacturer Part Number:

    NTD4906NT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK 4 LEAD Single Gauge Surface Mount

  • Package Description:

    DPAK-3/2

  • Pin Count:

    4

  • Manufacturer Package Code:

    369AA

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    48 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    37.5 W

  • Pulsed Drain Current-Max (IDM):

    223 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD4906NT4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTD4906NT4G is -55°C to 150°C.
  • To ensure reliability, follow the recommended assembly and handling procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a robust PCB design, and implementing adequate thermal management and ESD protection.
  • For optimal performance and thermal management, ensure a low-thermal-resistance PCB design, use a thermal pad or heat sink, and maintain a minimum of 1 mm clearance around the device. Also, consider using thermal vias and a thermal interface material (TIM) to improve heat dissipation.
  • Handle the device by the body, avoid touching the leads or die, and store the device in a dry, ESD-protected environment. Use anti-static packaging and follow proper ESD handling procedures to prevent damage.
  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 60 seconds maximum. For rework, use a low-temperature soldering iron (below 350°C) and avoid applying excessive force or heat to the device.

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NTD4906NT4G Overview

Use the download button to access the NTD4906NT4G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NTD49, or try a keyword search, such as Power Field-Effect Transistors

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Part Image NTD4906NT4H onsemi

Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET