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NTD4963N-35G - onsemi

Description: Obsolete - Power MOSFET 30V 44A 9.6 mOhm Single N-Channel DPAK

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NTD4963N-35G - onsemi PCB footprint - Other - Other - NTD4963N-35G-3
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NTD4963N-35G - onsemi  - 3D model - Other - NTD4963N-35G-3
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NTD4963N-35G Details

  • Manufacturer Part Number:

    NTD4963N-35G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    3.5 mm IPAK, Straight Lead

  • Package Description:

    IPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369AD

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    33.8 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.1 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35.7 W

  • Pulsed Drain Current-Max (IDM):

    132 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD4963N-35G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature (Tj) range of -55°C to 150°C.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • To protect the device from ESD, it's essential to follow proper handling and storage procedures, use ESD-safe materials, and implement ESD protection circuits in the design. The device has an internal ESD protection diode, but external protection is still recommended.
  • The recommended gate drive voltage is 10V to 15V, and the recommended gate drive current is 1A to 2A. However, the actual values may vary depending on the specific application and switching frequency.

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NTD4963N-35G Overview

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