Part Image

NTD5406NG - onsemi

Description: Obsolete - Power MOSFET 60V 30A 26 mOhm Single N−Channel DPAK

Download NTD5406NG Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTD5406NG - onsemi PCB footprint - Other - Other - NTD5406NG-3
click to zoom

NTD5406NG Details

  • Manufacturer Part Number:

    NTD5406NG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    LEAD FREE, CASE 369C-01, DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    450 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD5406NG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path short and direct. A 4-layer PCB with a dedicated thermal layer is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider derating the device's power handling capability at high temperatures.
  • The NTD5406NG has built-in ESD protection, but it's still recommended to follow standard ESD handling precautions during assembly and testing. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.
  • Yes, the NTD5406NG can be used in switching regulator applications, but it's essential to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency is within the recommended range.
  • The thermal resistance values in the datasheet are specified for a specific set of conditions (e.g., junction-to-case, junction-to-ambient). To accurately estimate the device's thermal performance, consider the actual application conditions, such as PCB layout, airflow, and thermal interface material.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTD5406NG Overview

Use the download button to access the NTD5406NG schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like NTD54, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTD5406NG

Showing 0 results

NTD5406NG Alternates

Showing results

Image Part Number Model
Part Image NTD5406NT4G onsemi

Power Field-Effect Transistor, 12.2A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET