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NTD600N80S3Z - onsemi

Description: N-Channel, SUPERFET III 800 V, 600 m, 8 A, D−PAK TO−252, CASE 369AS

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NTD600N80S3Z - onsemi PCB footprint - Other - Other - NTD600N80S3Z-2
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NTD600N80S3Z - onsemi  - 3D model - Other - NTD600N80S3Z-2
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NTD600N80S3Z Details

  • Manufacturer Part Number:

    NTD600N80S3Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.6

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    21 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD600N80S3Z Frequently Asked Questions (FAQs)

  • The maximum SOA for the NTD600N80S3Z is typically defined by the device's voltage and current ratings. For this device, the maximum voltage rating is 600V and the maximum current rating is 80A. Operating the device within these ratings ensures safe operation.
  • Proper cooling is crucial for the NTD600N80S3Z. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) to fill any gaps. A heat sink with a thermal resistance of 1°C/W or lower is recommended. Additionally, ensure good airflow around the heat sink.
  • The recommended gate drive voltage for the NTD600N80S3Z is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase the risk of gate oxide damage.
  • To protect the NTD600N80S3Z from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • For the NTD600N80S3Z, a good PCB layout should minimize parasitic inductance and capacitance. Use a star-point grounding scheme, keep high-frequency traces short and away from sensitive nodes, and use a solid ground plane to reduce electromagnetic interference (EMI).

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