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NTDV20N06LT4G - onsemi

Description: RoHS Compliant; Qualified to AEC Q101

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NTDV20N06LT4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
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NTDV20N06LT4G - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
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NTDV20N06LT4G Details

  • Manufacturer Part Number:

    NTDV20N06LT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    128 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTDV20N06LT4G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • To ensure the device is properly biased for optimal switching performance, make sure to provide a stable gate-source voltage (Vgs) between 4.5V to 10V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate drive circuit is capable of providing sufficient current to charge and discharge the gate capacitance.
  • To prevent ESD damage, handle the device in an ESD-protected environment, use ESD-protected workbenches and tools, and wear ESD-protective wrist straps or clothing. Avoid touching the device's pins or exposed die, and use anti-static packaging and shipping materials.
  • To determine the suitable heat sink for this device, calculate the maximum power dissipation (PD) based on the application's requirements, and then select a heat sink with a thermal resistance (Rth) that meets the required junction-to-ambient thermal resistance (RthJA). Consider factors like heat sink material, size, and airflow when making the selection.
  • The NTDV20N06LT4G meets various reliability and quality standards, including AEC-Q101, IATF 16949, and ISO 9001. It is also qualified for automotive and industrial applications, and is manufactured using a robust and controlled process to ensure high reliability and quality.

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NTDV20N06LT4G Overview

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