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NTE642 - NTE ELECTRONICS

Description: RECTIFIER SCHOTTKY BARRIER 100V 2A FAST SWITCHING DO-214AA SURFACE MOUNT

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NTE642 - NTE ELECTRONICS PCB footprint - Diodes Moulded - Diodes Moulded - DO214AA
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NTE642 - NTE ELECTRONICS  - 3D model - Diodes Moulded - DO214AA
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NTE642 Details

  • Manufacturer Part Number:

    NTE642

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    R-PDSO-C2

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    NTE Electronics Inc

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE, LOW POWER LOSS

  • Application:

    FAST RECOVERY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.85 V

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    500 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

NTE642 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the NTE642 is not explicitly stated in the datasheet. However, based on similar transistors, it's recommended to limit the collector-emitter voltage to 60V and the collector current to 10A to ensure safe operation.
  • While the NTE642 can be used as a switch, its transition frequency (ft) is around 30MHz, which may not be suitable for very high-frequency applications. For high-frequency switching, consider using a transistor with a higher ft, such as the NTE643 or NTE645.
  • To ensure proper biasing for linear amplifier applications, follow these guidelines: 1) Choose a suitable collector-emitter voltage (Vce) based on the application's requirements. 2) Select a base-emitter voltage (Vbe) that provides the desired current gain. 3) Use a resistor network to establish a stable bias point. Consult the datasheet and application notes for more information.
  • The thermal resistance (RθJA) of the NTE642 is not explicitly stated in the datasheet. However, based on similar transistors, it's estimated to be around 1.5°C/W. This value can be used for thermal calculations, but consult the manufacturer or a reliable thermal modeling tool for more accurate results.
  • Yes, the NTE642 can be used in a push-pull amplifier configuration. However, ensure that the transistors are properly matched and biased to minimize crossover distortion. Additionally, consider using a complementary transistor pair, such as the NTE642 and NTE643, to optimize performance.

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NTE642 Overview

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Part Image S2B_NL Fairchild Semiconductor Corporation

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