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NTF2955T1G - onsemi

Description: Design for low RDS(on); Withstands High Energy in Avalache and Commutaion Modes; RoHS Compliant

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PCB Footprints
NTF2955T1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223 (TO−261) ST SUFFIX CASE 318E−04 ISSUE N
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3D Models
NTF2955T1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223 (TO−261) ST SUFFIX CASE 318E−04 ISSUE N
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NTF2955T1G Details

  • Manufacturer Part Number:

    NTF2955T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    225 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.92 W

  • Pulsed Drain Current-Max (IDM):

    10.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTF2955T1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTF2955T1G is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet, including the recommended voltage and current levels for the input and output pins.
  • A good PCB layout should prioritize thermal management, with a solid ground plane and thermal vias to dissipate heat. A heat sink or thermal pad may also be necessary for high-power applications.
  • To troubleshoot issues, check the PCB layout and thermal management, ensure proper biasing and input/output connections, and verify that the device is operating within the recommended specifications.
  • Yes, follow standard ESD protection procedures when handling the NTF2955T1G, including using an ESD wrist strap, anti-static bags, and a grounded work surface.

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NTF2955T1G Overview

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Part Image NVF2955PT1G onsemi

Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA