Part Image

NTF3055L175T1G - onsemi

Description: Obsolete - Power MOSFET 20V 2.5A 145 mOhm Dual P-Channel TSOP6

Download NTF3055L175T1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTF3055L175T1G - onsemi PCB footprint - Other - Other - NTF3055L175T1G-1
click to zoom

NTF3055L175T1G Details

  • Manufacturer Part Number:

    NTF3055L175T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    65 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    0.175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTF3055L175T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable voltage supply and a bias circuit to ensure proper operation. A voltage regulator and a bias resistor network can be used to provide a stable voltage and current to the device.
  • The device has a high power density, so thermal design is critical. Ensure good thermal conductivity between the device and the heat sink, and consider using thermal interface materials to reduce thermal resistance.
  • Use ESD protection devices such as TVS diodes or ESD protection arrays to protect the device from electrostatic discharge. Handle the device with ESD-safe materials and follow proper handling procedures.
  • Use a soldering iron with a temperature of 250°C to 260°C, and ensure the device is properly aligned and secured to the PCB. Avoid applying excessive force or bending the leads during assembly.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTF3055L175T1G Overview

Use the download button to access the NTF3055L175T1G schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like NTF30, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTF3055L175T1G

Showing 0 results

NTF3055L175T1G Alternates

Showing results

Image Part Number Model
Part Image NTF3055L175T3G onsemi

Power Field-Effect Transistor, 2A I(D), 60V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA