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NTF5P03T3G - onsemi

Description: Ultra Low RDS(on); Higher Efficiency Extending Battery Life; Logic Level Gate Drive; Avalanche Energy Specified; RoHS Compliant

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PCB Footprints
NTF5P03T3G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04
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3D Models
NTF5P03T3G - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04
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NTF5P03T3G Details

  • Manufacturer Part Number:

    NTF5P03T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.32

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    140 pF

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.56 W

  • Pulsed Drain Current-Max (IDM):

    19 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    140 ns

  • Turn-on Time-Max (ton):

    148 ns

NTF5P03T3G Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the NTF5P03T3G can withstand is 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is Vgs = 4.5V to 5.5V.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the device close to the power source, and use a solid ground plane to reduce inductance.
  • To protect the NTF5P03T3G from ESD, handle the device with an anti-static wrist strap or mat, and use ESD-protected packaging and storage.
  • To manage thermal performance, use a heat sink with a thermal interface material, and ensure good airflow around the device. The recommended thermal resistance is RθJA ≤ 40°C/W.

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NTF5P03T3G Overview

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