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NTGS3446T1G - onsemi

Description: Ultra Low RDS(on); Higher Efficiency Extending Battery Life; Logic Level Gate Drive; Diode Exhibits High Speed, Soft Recovery; Avalanche Energy Specified; IDSS Specified at Elevated Temperature

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PCB Footprints
NTGS3446T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP−6 CASE 318G−02 ISSUE N
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3D Models
NTGS3446T1G - onsemi  - 3D model - SOT23 (6-Pin) - TSOP−6 CASE 318G−02 ISSUE N
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NTGS3446T1G Details

  • Manufacturer Part Number:

    NTGS3446T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOP-6

  • Pin Count:

    6

  • Manufacturer Package Code:

    318G-02

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    100 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    95 ns

  • Turn-on Time-Max (ton):

    36 ns

NTGS3446T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND9093/D.
  • The NTGS3446T1G requires a specific biasing scheme to achieve optimal performance. A recommended biasing circuit is shown in the datasheet, but it's essential to ensure the voltage and current limits are not exceeded. A detailed biasing guide can be found in the onsemi application note AND9093/D.
  • The NTGS3446T1G is a sensitive device and requires careful handling and soldering. Onsemi provides a recommended soldering and handling guide in their application note AND9093/D, which includes guidelines for storage, handling, and soldering to prevent damage.
  • Common issues with the NTGS3446T1G include overheating, oscillation, and biasing issues. Onsemi provides a troubleshooting guide in their application note AND9093/D, which covers common problems and their solutions.
  • The NTGS3446T1G is manufactured according to onsemi's quality and reliability standards, which include rigorous testing and inspection procedures. The device is also qualified according to industry standards such as AEC-Q101 and ISO/TS 16949.

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NTGS3446T1G Overview

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