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NTHL017N60S5H - onsemi

Description: 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 1.07 Ω; Ultra Low Gate Charge (Typ. Qg = 265 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 322 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 14.3 m Ω

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NTHL017N60S5H - onsemi - PCB symbol
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PCB Footprints
NTHL017N60S5H - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CX ISSUE A
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NTHL017N60S5H - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CX ISSUE A
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NTHL017N60S5H Details

  • Manufacturer Part Number:

    NTHL017N60S5H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.22

  • Avalanche Energy Rating (Eas):

    1350 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0179 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    625 W

  • Pulsed Drain Current-Max (IDM):

    431 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTHL017N60S5H Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for NTHL017N60S5H is a 5x6mm pad with a 1.5mm thermal pad in the center. The datasheet provides a recommended land pattern, but it's essential to consult the application note AN11174 for more detailed information on PCB layout and thermal management.
  • To ensure the SOA is not violated, you should consider the maximum current, voltage, and power dissipation ratings. Use the datasheet's SOA graph to verify that your application's operating conditions are within the safe area. Additionally, consider using a MOSFET driver with built-in overcurrent protection and thermal monitoring.
  • The maximum allowed voltage for the gate-source (VGS) pin is ±20V. Exceeding this voltage can damage the MOSFET. It's essential to ensure that the gate driver or controller does not exceed this voltage limit.
  • To calculate the power dissipation, use the equation P = I^2 * RDS(on) * duty cycle. Then, use the thermal resistance (RθJA) and the maximum allowed junction temperature (TJmax) to calculate the junction temperature. Consult the datasheet and application notes for more detailed information on thermal management and calculation.
  • Yes, the NTHL017N60S5H MOSFET is lead-free and RoHS (Restriction of Hazardous Substances) compliant. onsemi ensures that their products meet the environmental regulations and standards.

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NTHL017N60S5H Overview

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