NTHL0 Model Download Search Results
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NTHL060N090SC1
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1 | Typical RDSon; Ultra Low Gate Charge (Qg tot); Low Effective Output Capacitance (Coss); 100% UIL Tested; RoHS Compliant | Other | NTHL060N090SC1 |
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NTHL045N065SC1
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1 | 650V rated; Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A; High Junction Temperature; 100% UIL Tested; RoHS Compliant; High Speed Switching and Low Capacitance | Other | NTHL045N065SC1 |
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NTHL020N090SC1
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1 | 900V Rating; High Junction Temperature; Ultra Low Gate Charge; 100% UIL Tested; RoHS Compliant | Transistor Outline, Vertical | NTHL020N090SC1 |
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NTHL040N120SC1
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1 | Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A; High Speed Switching and Low Capacitance; 100% UIL Tested | Transistor Outline, Vertical | NTHL040N120SC1 |
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NTHL015N065SC1
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1 | High Junction Temperature; 100% UIL Tested; RoHS Compliant; High Speed Switching and Low Capacitance; 650V rated; Max RDS(on) = 18mΩ at Vgs = 18V, Id = 163A | Transistor Outline, Vertical | NTHL015N065SC1 |
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NTHL033N65S3HF
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1 | 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 188 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 28 mΩ | Other | NTHL033N65S3HF |
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NTHL080N120SC1
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1 | 1200V rated; Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A; High Speed Switching and Low Capacitance; 100% UIL Tested | Transistor Outline, Vertical | NTHL080N120SC1 |
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NTHL070N120M3S
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1 | Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 57 nC); High Speed Switching with Low Capacitance (Coss = 57 pF); 15V to 18V Gate Drive; New M3S technology: 65 mohm RDS(ON) with low Eon and Eoff losses; Halide Free and RoHS Compliant; 100% Avalanche Tested | Transistor Outline, Vertical | NTHL070N120M3S |
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NTHL082N65S3F
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1 | Optimized Capacitance; 700 V @ TJ = 150 °C; Typ. RDS(on) = 70 mΩ; Ultra Low Gate Charge (Typ. Qg = 81 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF); Excellent body diode performance (low Qrr, robust body diode); 100% Avalanche Tested; RoHS Compliant | Transistor Outline, Vertical | NTHL082N65S3F |
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NTHL040N120M3S
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1 | Halide Free and RoHS Compliant; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 75 nC); High Speed Switching with Low Capacitance (Coss = 80 pF); 15V to 18V Gate Drive; New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses; 100% Avalanche Tested | Transistor Outline, Vertical | NTHL040N120M3S |
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NTHL030N120M3S
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1 | 100% Avalanche Tested; Halide Free and RoHS Compliant; High Speed Switching with Low Capacitance (Coss = 106 pF); 15V to 18V Gate Drive; New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 107 nC) | Transistor Outline, Vertical | NTHL030N120M3S |
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NTHL060N065SC1
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1 | TJ = 175°C; Ultra Low Gate Charge (Typ. Qg = 74 nC); High Speed Switching with Low Capacitance (Coss = 133 pF); Zero reverse recovery current of body diode; Max RDS(on) = 44 mΩ at Vgs = 18V; 100% UIL Tested; RoHS Compliant | Transistor Outline, Vertical | NTHL060N065SC1 |
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NTHL040N65S3F
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1 | 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 158 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 32 mΩ | Transistor Outline, Vertical | NTHL040N65S3F |
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NTHL067N65S3H
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1 | 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 80 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 55 m Ω; Internal Gate Resistance: 0.6 Ω | Transistor Outline, Vertical | NTHL067N65S3H |
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NTHL020N120SC1
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1 | 1200V; Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested | Other | NTHL020N120SC1 |
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NTHL080N120SC1A
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1 | 1200V rated; Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A; High Speed Switching and Low Capacitance; 100% UIL Tested | Transistor Outline, Vertical | NTHL080N120SC1A |
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NTHL065N65S3F
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1 | 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 98 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 876 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 54 mΩ | Transistor Outline, Vertical | NTHL065N65S3F |
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NTHL016N065M3S
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1 | 15V to 18V Gate Drive; New M3S technology: 16 mohm RDS(ON) with low Eon and Eoff losses; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 98 nC); High Speed Switching with Low Capacitance (Coss = 198 pF); 100% Avalanche Tested; Halide Free and RoHS Compliant | Transistor Outline, Vertical | NTHL016N065M3S |
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NTHL012N065M3S
onsemi
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1 | N-Channel 650 V 124A (Tc) 428W (Tc) Through Hole TO-247-3 | Transistor Outline, Vertical | NTHL012N065M3S |
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NTHL050N65S3HF
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1 | 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 125 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1051 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 41 mΩ | Transistor Outline, Vertical | NTHL050N65S3HF |
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NTHL023N065M3S
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1 | Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 69 nC); High Speed Switching with Low Capacitance (Coss = 153 pF); 15V to 18V Gate Drive; Typ. RDS(on) = 23 mΩ at Vgs = 18V; 100% Avalanche Tested; Halide Free and RoHS Compliant | Transistor Outline, Vertical | NTHL023N065M3S |
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NTHL095N65S3HF
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1 | 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 66 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 78 mΩ | Transistor Outline, Vertical | NTHL095N65S3HF |
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NTHL041N60S5H
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1 | Ultra Low Gate Charge (Typ. Qg = 108 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 643 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 32.8 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.6 Ω | Other | NTHL041N60S5H |
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NTHL017N60S5H
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1 | 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 1.07 Ω; Ultra Low Gate Charge (Typ. Qg = 265 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 322 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 14.3 m Ω | Transistor Outline, Vertical | NTHL017N60S5H |
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NTHL040N65S3HF
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1 | Power Field-Effect Transistor, 65A I(D), 650V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NTHL040N65S3HF |
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