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NTHL065N65S3F - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 98 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 876 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 54 mΩ

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NTHL065N65S3F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - NTHL065N65S3F-1
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NTHL065N65S3F - onsemi  - 3D model - Transistor Outline, Vertical - NTHL065N65S3F-1
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NTHL065N65S3F Details

  • Manufacturer Part Number:

    NTHL065N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CH

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    635 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    337 W

  • Pulsed Drain Current-Max (IDM):

    115 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTHL065N65S3F Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTHL065N65S3F is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 65V. Additionally, the device should be operated within the recommended current limits.
  • A multi-layer PCB with a solid ground plane and a thermal relief pattern is recommended. A heat sink or thermal pad can be used to improve thermal dissipation. The device should be placed on a thermally conductive substrate, and thermal vias should be used to dissipate heat.
  • To protect the device from ESD, handle the device by the body or use an anti-static wrist strap. Use an ESD-protected workstation and ensure all tools and equipment are grounded. Avoid touching the device's pins or leads, and use a conductive foam or anti-static bag for storage.
  • The NTHL065N65S3F meets the quality and reliability standards of onsemi, including AEC-Q101 and IATF 16949. The device is also RoHS and REACH compliant.

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NTHL065N65S3F Overview

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