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NTHL023N065M3S - onsemi

Description: Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 69 nC); High Speed Switching with Low Capacitance (Coss = 153 pF); 15V to 18V Gate Drive; Typ. RDS(on) = 23 mΩ at Vgs = 18V; 100% Avalanche Tested; Halide Free and RoHS Compliant

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PCB Footprints
NTHL023N065M3S - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD_2024-1
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3D Models
NTHL023N065M3S - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD_2024-1
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NTHL023N065M3S Details

  • Manufacturer Part Number:

    NTHL023N065M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Package Description:

    TO-247-3LD, 3 PIN

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    192 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    263 W

  • Pulsed Drain Current-Max (IDM):

    218 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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NTHL023N065M3S Overview

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