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NTHL095N65S3HF - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 66 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 78 mΩ

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NTHL095N65S3HF - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-247 O
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NTHL095N65S3HF - onsemi  - 3D model - Transistor Outline, Vertical - 3-Pin TO-247 O
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NTHL095N65S3HF Details

  • Manufacturer Part Number:

    NTHL095N65S3HF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2018-12-04

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    440 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    272 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTHL095N65S3HF Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the NTHL095N65S3HF is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal interface material (TIM) contact between the device and heat sink.
  • The maximum current rating of the NTHL095N65S3HF is 95A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and PCB design.
  • To protect the NTHL095N65S3HF from overvoltage, use a transient voltage suppressor (TVS) or a zener diode with a voltage rating higher than the maximum drain-source voltage (DSS) of 650V.
  • The recommended gate drive voltage for the NTHL095N65S3HF is between 10V and 15V, with a maximum gate-source voltage (VGS) of ±20V.

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NTHL095N65S3HF Overview

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