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NTHL040N65S3F - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 158 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 32 mΩ

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NTHL040N65S3F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_
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NTHL040N65S3F - onsemi  - 3D model - Transistor Outline, Vertical - TO-247_
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NTHL040N65S3F Details

  • Manufacturer Part Number:

    NTHL040N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CH

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    52 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1009 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    446 W

  • Pulsed Drain Current-Max (IDM):

    162.5 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTHL040N65S3F Frequently Asked Questions (FAQs)

  • The maximum SOA for the NTHL040N65S3F is typically defined by the device's voltage and current ratings. According to the datasheet, the maximum voltage rating is 650V and the maximum current rating is 40A. However, it's essential to consult the datasheet and application notes for specific SOA guidelines.
  • Proper thermal management is crucial for the NTHL040N65S3F. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. The recommended junction-to-case thermal resistance (RθJC) is 0.5°C/W. A heat sink with a thermal resistance of 1°C/W or lower is recommended.
  • The recommended gate drive voltage for the NTHL040N65S3F is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • To protect the NTHL040N65S3F from overvoltage and overcurrent, use a suitable voltage clamp or surge protector, and consider implementing overcurrent protection (OCP) and overvoltage protection (OVP) circuits. Additionally, ensure that the device is operated within its recommended operating conditions.
  • For optimal performance and to minimize electromagnetic interference (EMI), follow good PCB layout and routing practices. Keep the power traces short and wide, and use a solid ground plane. Consult the datasheet and application notes for specific layout and routing guidelines.

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