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NTHL067N65S3H - onsemi

Description: 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 80 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 55 m Ω; Internal Gate Resistance: 0.6 Ω

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PCB Footprints
NTHL067N65S3H - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CH ISSUE A
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NTHL067N65S3H - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CH ISSUE A
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NTHL067N65S3H Details

  • Manufacturer Part Number:

    NTHL067N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-09-10

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    422 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    266 W

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTHL067N65S3H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature (Tj) range of -55°C to 150°C.
  • The NTHL067N65S3H has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. A human body model (HBM) of ±2000V and a machine model (MM) of ±200V are recommended.
  • Yes, the NTHL067N65S3H is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, it's essential to follow the recommended design and testing guidelines to ensure the device meets the specific application requirements.
  • The recommended gate drive voltage for the NTHL067N65S3H is 10V to 15V, and the recommended gate drive current is 1A to 2A. However, the actual gate drive requirements may vary depending on the specific application and switching frequency.

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NTHL067N65S3H Overview

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