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NTHL030N120M3S - onsemi

Description: 100% Avalanche Tested; Halide Free and RoHS Compliant; High Speed Switching with Low Capacitance (Coss = 106 pF); 15V to 18V Gate Drive; New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 107 nC)

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NTHL030N120M3S - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3LD CASE 340CH ISSUE A
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NTHL030N120M3S - onsemi  - 3D model - Transistor Outline, Vertical - TO-247-3LD CASE 340CH ISSUE A
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NTHL030N120M3S Details

  • Manufacturer Part Number:

    NTHL030N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    73 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9.4 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    313 W

  • Pulsed Drain Current-Max (IDM):

    193 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTHL030N120M3S Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure the device is properly biased, make sure to follow the recommended biasing circuit in the datasheet, and use a stable voltage source with minimal ripple. Also, ensure that the gate-source voltage is within the recommended range, typically between 4-6V.
  • Critical parameters to monitor during operation include junction temperature, drain-source voltage, gate-source voltage, and drain current. Monitoring these parameters can help prevent device failure due to overheating, overvoltage, or overcurrent.
  • To handle ESD protection, follow proper handling and storage procedures, use ESD-safe materials and tools, and consider adding external ESD protection devices such as TVS diodes or ESD arrays. Also, ensure that the PCB design includes ESD protection features such as guard rings and ESD diodes.
  • The recommended soldering conditions for this device include a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering method that minimizes thermal shock. It's also recommended to use a solder with a melting point above 217°C.

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NTHL030N120M3S Overview

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