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NTHL080N120SC1A - onsemi

Description: 1200V rated; Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A; High Speed Switching and Low Capacitance; 100% UIL Tested

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PCB Footprints
NTHL080N120SC1A - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CX
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NTHL080N120SC1A - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CX
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NTHL080N120SC1A Details

  • Manufacturer Part Number:

    NTHL080N120SC1A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-03-09

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    171 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6.5 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    178 W

  • Pulsed Drain Current-Max (IDM):

    132 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTHL080N120SC1A Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the NTHL080N120SC1A is 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The recommended gate drive voltage for the NTHL080N120SC1A is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the NTHL080N120SC1A from ESD, handle the device with anti-static wrist straps, mats, or bags. Ensure that the device is stored in a conductive bag or wrapped in anti-static material during transportation and storage.
  • The maximum allowable voltage imbalance between the drain and source terminals is ±10V. Exceeding this limit may cause damage to the device.

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NTHL080N120SC1A Overview

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Part Image NTHL080N120SC1 onsemi

Power Field-Effect Transistor, 31A I(D), 1200V, 0.11ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247